Transistor MOSFET N-CH 135V 5-Pin SOT-1121A

• VDS drain-source voltage 135 V
• VGS gate-source voltage +11 V
• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 600 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
• Tstg storage temperature +150 C
• Tj junction temperature [1]  225 C