NXP LDMOS 1.1 KW FM Transistor-Unbreakable

• Typical pulsed performance at frequency of 108 MHz,
• supply voltage of 50 V and an IDq of 40 mA
• Output power = 1400 W
• Power gain = 28 dB
• Efficiency = 72 %
• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 128 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)