Transistor MOSFET N-CH 135V 5-Pin SOT-1121A
VDS drain-source voltage 135 V
VGS gate-source voltage +11 V
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
De...
Transistor RF MOSFET N-CH 65V 3-Pin CDIP SMD T/R
W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
Supply voltage of 28 V and an IDq of 100 mA:
Efficiency = 31 %
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NXP LDMOS UHF Transistor
Excellent ruggedness (VSWR > 40 : 1 through all phases)Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
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NXP LDMOS Transistor
Typical CW performance at the frequency of 225 MHz,
Supply voltage of 50 V and an IDq of 50 mA:
Average output power = 20 W
Power gain = 27.5 dB
Efficiency = 70 %
Easy power control...
FM MOSFET TRANSISTOR
FM PUSH-PULL POWER MOSFET TRANSISTOR
Brand: PHILIPS
Supply Voltage: 48 V
Gain: 18-20dB
Max Output Power: 300 W
Equivalent: MRF151G
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600W FM LDMOS Transistor
Typical CW performance at the frequency of 225 MHz,
Supply voltage of 50 V and an IDq of 1000 mA:
Average output power = 500 W
Power gain = 26.5 dB
Efficiency = 70 %
Easy power co...
NXP LDMOS Transistor
Typical pulsed performance at the frequency of 225 MHz,
Supply voltage of 50 V and an IDq of 40 mA,
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Easy power control...
NXP LDMOS Transistor-Unbreakable
Typical pulsed performance at frequency of 225 MHz
Supply voltage of 50
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excelle...
NXP LDMOS 1.1 KW FM Transistor-Unbreakable
Typical pulsed performance at frequency of 108 MHz,
supply voltage of 50 V and an IDq of 40 mA
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy po...
LDMOS N-CH 135V 4-Pin SOT-539A Box
VDS drain-source voltage 135 V
VGS gate-source voltage +11 V
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Desig...